Electrical property of high-fluence metal ion implanted sapphire and its thermal annealing effects

被引：6

作者：

Kobayashi, T ^{[1
]}

Terai, T ^{[1
]}

机构：

[1] Univ Tokyo, Engn Res Inst, Bunkyo Ku, Tokyo 113, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 141卷 / 1-4期

关键词：

Al2O3; ion implantation; RBS; electrical properties;

D O I：

10.1016/S0168-583X(98)00154-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Iron ions were implanted to single crystal alpha-alumina (0 0 0 1) surface up to 1.0 x 10(18) ions/cm(2) at 380 keV. Postimplantation electrical-resistance measurement was carried out from room temperature to 5 K. The resistance of the specimen implanted with 1.0 x 10(17) ions/cm(2) was 1.13 x 10(9) Omega at room temperature. It increased with decreasing temperature to 3.33 x 10(11) Omega at 77 K. On the other hand, the resistances of the specimens with 4.0 x 10(17) ions/cm(2) and 1.0 x 10(18) ions/cm(2) were 3.6 x 10(2) Omega and 5.5 Omega in room temperature, respectively. They decreased slightly with decreasing temperature to 3.0 x 10(2) Omega and 4.1 Omega at 5 K. These high-fluence implanted specimens were annealed at 1073 K for 12 h in air. Iron atom migration toward the surface due to thermal annealing were also investigated by Rutherford's Backscattering Spectroscopy (RBS). An island-like feature appeared on the surface of the specimen, which was observed by Atomic Force Microscopy (AFM). (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：441 / 445

页数：5

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