Composition determination of β-(AlxGa1-x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction

被引：92
|
作者：
Oshima, Yuichi [1 ]
Ahmadi, Elaheh [1 ]
Badescu, Stefan C. [2 ]
Wu, Feng [1 ]
Speck, James S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
[2] Sensors Directorate, Wright Patterson Air Force Base, Dayton, OH 45433 USA
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
10.7567/APEX.9.061102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate X-ray-diffraction-based composition estimation of beta-(AlxGa1-x)(2)O-3 coherently grown on (010) beta-Ga2O3. The relation between the strain along the [010] direction and the Al composition of the beta-(AlxGa1-x)(2)O-3 layer was formulated using the stress-strain relationship in the monoclinic system. This formulation allows us to estimate the Al composition using the out-of-plane lattice spacing determined by conventional X-ray omega-2 theta. measurements. This method was applied to molecular-beam-epitaxy-grown coherent beta-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures, and the Al composition in beta-(AlxGa1-x)(2)O-3 agrees closely with the composition determined directly by atom probe tomography. (C) 2016 The Japan Society of Applied Physics
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页数：3
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