Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

被引：24

作者：

Fedichkin, F. ^{[1
]}

Guillet, T. ^{[1
]}

Valvin, P. ^{[1
]}

Jouault, B. ^{[1
]}

Brimont, C. ^{[1
]}

Bretagnon, T. ^{[1
]}

Lahourcade, L. ^{[2
]}

Grandjean, N. ^{[2
]}

Lefebvre, P. ^{[1
]}

Vladimirova, M. ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, Lab Charles Coulomb, UMR 5221, F-34095 Montpellier, France

[2] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW APPLIED | 2016年 / 6卷 / 01期

关键词：

INTERNAL ELECTRIC-FIELD; DIFFUSION; LAYERS; DRIFT; GAS;

D O I：

10.1103/PhysRevApplied.6.014011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonradiative recombination. From the comparison of the spatial and temporal dynamics of photoluminescence, we conclude that the propagation of excitons under continuous-wave excitation is assisted by efficient screening of the in-plane disorder. Modeling within drift-diffusion formalism corroborates this conclusion and suggests that exciton propagation is still limited by the exciton scattering on defects rather than by exciton-exciton scattering so that improving interface quality can boost exciton transport further. Our results pave the way towards room-temperature excitonic devices based on gate-controlled exciton transport in wide-band-gap polar heterostructures.

引用

页数：10

共 50 条

[1] Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
Fedichkin, F.
Andreakou, P.
Jouault, B.
Vladimirova, M.
Guillet, T.
Brimont, C.
Valvin, P.
Bretagnon, T.
Dussaigne, A.
Grandjean, N.
Lefebvre, P.
PHYSICAL REVIEW B, 2015, 91 (20)
[2] Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells
Aristegui, R.
Chiaruttini, F.
Jouault, B.
Lefebvre, P.
Brimont, C.
Guillet, T.
Vladimirova, M.
Chenot, S.
Cordier, Y.
Damilano, B.
PHYSICAL REVIEW B, 2022, 106 (03)
[3] ROOM-TEMPERATURE EXCITONS IN STRAINED INGAAS/GAAS QUANTUM-WELLS
SHEN, WZ
TANG, WG
SHEN, SC
WANG, SM
ANDERSSON, T
JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (06) : L79 - L83
[4] Transport of indirect excitons in ZnO quantum wells
Kuznetsova, Y. Y.
Fedichkin, F.
Andreakou, P.
Calman, E. V.
Butov, L. V.
Lefebvre, P.
Bretagnon, T.
Guillet, T.
Vladimirova, M.
Morhain, C.
Chauveau, J. -M.
OPTICS LETTERS, 2015, 40 (15) : 3667 - 3670
[5] Long coherent dynamics of localized excitons in (In,Ga) N/GaN quantum wells
Poltavtsev, S., V
Solovev, I. A.
Akimov, I. A.
Chaldyshev, V. V.
Lundin, W., V
Sakharov, A., V
Tsatsulnikov, A. F.
Yakovlev, D. R.
Bayer, M.
PHYSICAL REVIEW B, 2018, 98 (19)
[6] FEMTOSECOND DYNAMICS OF RESONANTLY EXCITED EXCITONS IN ROOM-TEMPERATURE GAAS QUANTUM WELLS
KNOX, WH
FORK, RL
DOWNER, MC
MILLER, DAB
CHEMLA, DS
SHANK, CV
GOSSARD, AC
WIEGMANN, W
PHYSICAL REVIEW LETTERS, 1985, 54 (12) : 1306 - 1309
[7] NONLINEAR OPTICS WITH ROOM-TEMPERATURE EXCITONS IN GAAS ALGAAS MULTIPLE QUANTUM WELLS
CHEMLA, DS
MILLER, DAB
SMITH, PW
GOSSARD, AC
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1983, 73 (12) : 1863 - 1863
[8] Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells
Lefebvre, P
Allegre, J
Gil, B
Kavokine, A
Mathieu, H
Kim, W
Salvador, A
Botchkarev, A
Morkoc, H
PHYSICAL REVIEW B, 1998, 57 (16) : R9447 - R9450
[9] Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells
Phys Rev B, 16 (R9447):
[10] Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells
Lomascolo, M
Traetta, G
Passaseo, A
Longo, M
Cannoletta, D
Cingolani, R
Bonfiglio, A
Della Sala, F
Di Carlo, A
Lugli, P
Natali, M
Sinha, SK
Berti, M
Drigo, AV
Botchkarev, H
Morkoc, H
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 178 (01): : 73 - 78

← 1 2 3 4 5 →