Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition

被引：8
|
作者：
Lo, Shun-Tsung [1 ]
Chen, Kuang Yao [1 ]
Lin, T. L. [1 ]
Lin, Li-Hung [2 ]
Luo, Dong-Sheng [3 ]
Ochiai, Y. [4 ]
Aoki, N. [4 ]
Wang, Yi-Ting [1 ]
Peng, Zai Fong [2 ]
Lin, Yiping [3 ]
Chen, J. C. [3 ]
Lin, Sheng-Di [5 ]
Huang, C. F. [6 ]
Liang, C. -T. [1 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[2] Natl Chiayi Univ, Dept Appl Phys, Chiayi 600, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan
[4] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan
[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[6] Ind Technol Res Inst, Natl Measurement Lab, Ctr Measurement Stand, Hsinchu 300, Taiwan
来源：
SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 39-40期
关键词：
Semiconductor; Epitaxy; Electron-electron interactions; Quantum Hall effect; FIELD-INDUCED DELOCALIZATION; LOW MAGNETIC-FIELDS; PHASE-DIAGRAM; LANDAU QUANTIZATION; DIMENSIONS; TRANSPORT; LIQUID; GAS; HETEROSTRUCTURES; CONDUCTIVITY;
D O I：
10.1016/j.ssc.2010.07.040
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1902 / 1905
页数：4
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