Effect of CdS on the third-order nonlinearity in bulk GeS2-Ga2S3-CdS chalcogenide glasses

被引：0
|
作者：
He, X. [1 ]
Liu, Q. [1 ]
Zhang, P. [1 ]
Zhou, H. [2 ]
Hou, Y. [1 ]
Qian, S. [2 ]
Zhao, Xiujian [1 ]
机构：
[1] Wuhan Univ Technol, Minist Educ, Key Lab Silicate Mat Sci & Engn, Wuhan 430070, Hubei, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2011年 / 13卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
Chalcogenide glasses; Third-order Nonlinearity; Z-scan; OPTICAL-PROPERTIES; ELECTRON-BEAM; FILMS;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effect of CdS on the third-ord er nonlinearity X-(3) in bulk GeS2-Ga2S3-CdS chalcogenide glasses was investigated using the Z-scan measurements. The X-(3) increased with the increase of CdS content, which was strongly related to the addition of Cd, because it caused the appearance of non-briging sulfurs in glass, and the polarity of bonds in glasses was enhanced to lead serious distortion of atoms electron clouds to induce larger third-order nonlinear responses. The largest third-order nonlinear susceptibility of the glass containing 15% CdS (in mol) in our experiments was obtained as 9.17x10(-13) esu.
引用
收藏
页码：19 / 23
页数：5
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