LiTaO3/Silicon composite wafers for the fabrication of low loss low TCF high coupling resonators for filter applications

被引:3
|
作者
Ballandras, S. [1 ]
Courjon, E. [1 ]
Baron, T. [2 ]
Moulet, J. -B. [3 ]
Signamarcheix, T. [3 ]
Daniau, W. [2 ]
机构
[1] Frec N Sys SAS, F-25000 Besancon, France
[2] FEMTO ST, 15B Ave Montboucons, F-25000 Besancon, France
[3] CEA LETI, F-38054 Grenoble, France
来源
PROCEEDINGS OF THE 2015 ICU INTERNATIONAL CONGRESS ON ULTRASONICS | 2015年 / 70卷
关键词
D O I
10.1016/j.phpro.2015.08.210
中图分类号
O59 [应用物理学];
学科分类号
摘要
SAW devices are widely used for radio-frequency (RF) telecommunication filtering and the number of SAW filters, resonators or duplexers is still increasing in RF stage of cellular phones. Therefore, a strong effort is still dedicated to reduce as much as possible their sensitivity to environmental parameter and more specifically to temperature. Bounding processes have been developed at FEMTO-ST and CEA-LETI using either Au/Au or direct bonding techniques for the fabrication of composite wafers combining materials with very different thermoelastic properties, yielding innovative solutions for about-zero temperature coefficient of frequency (TCF) bulk acoustic wave devices. In the present work, this approach has been applied to (YXl)/42 degrees lithium tantalate plates, bounded onto (100) silicon wafers and thinned down to 25 mu m. The leading idea already explored by other groups as mentioned in introduction consists in impeding the thermal expansion of the piezoelectric material using silicon limited expansion. 2 GHz resonators have been built on such plates and tested electrically and thermally, first by tip probing. A dramatic reduction of the TCF is observed for all the tested devices, allowing to reduce the thermal drift of the resonators down to a few ppm.K-1 within the standard temperature range. We then propose an analysis of the frequency-temperature behavior of the device to improve the resonator design to use these wafers for industrial applications. (C) 2015 The Authors. Published by Elsevier B.V.
引用
收藏
页码:1007 / 1011
页数:5
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