Grain Boundary Recombination and Efficiency of Polycrystalline Silicon Solar Cells

被引：0
|
作者：
Sharma, Kiran [1 ]
Joshi, D. P. [2 ]
Bhatt, D. P. [3 ]
机构：
[1] Graph Era Univ, Dept Phys, Dehra Dun, Uttarakhand, India
[2] DBS PG Coll, Dept Phys, Dehra Dun, Uttarakhand, India
[3] Govt PG Coll, Dept Phys, Rishikesh, Uttarakhand, India
来源：
2009 INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN ELECTRONIC AND PHOTONIC DEVICES AND SYSTEMS (ELECTRO-2009) | 2009年
关键词：
polycrystalline silicon; grain boundary; solar cells;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of grain boundary (GB) space-charge potential barrier height (qV(g)), effective diffusion length of minority carriers L-n*, and the efficiency of polycrystalline silicon (PX-Si) solar cells on grain size is studied theoretically. The computations are done by considering Gaussian energy distribution for GB interface states. It is observed that a good agreement between the theoretical results and the available experimental data for efficiency of PX-Si solar cells can be achieved only when the variation of diode quality factor with grain size is considered.
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页码：511 / +
页数：2
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