Fabrication of vertically aligned Si nanowires and their application in a gated field emission device

被引：55
|
作者：
She, JC [1 ]
Deng, SZ
Xu, NS
Yao, RH
Chen, J
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
[2] Sun Yat Sen Univ, Guangdong Prov Key Lab Display Mat & Technol, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2162692
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A technique involving a combination of using self-assembled nanomask and anisotropic plasma etching is developed for fabricating vertically aligned single-crystalline Si nanowires (SiNWs). The SiNWs are shown to have excellent field emission performance with the turn-on field as low as 0.8 MV/m and the threshold field being 5.0 MV/m. In addition, an emission current density of 442 mA/cm(2) can be obtained at an applied field of similar to 14 MV/m. The technique is easily employed to fabricate arrays of SiNW-based field emission microtriodes. Mechanisms are proposed to explain the formation of the SiNWs and the observed field emission properties. (c) 2006 American Institute of Physics.
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