Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry

被引：4
|
作者：
Wang, Qian [1 ]
Liu, Weiguo [1 ]
Gong, Lei [1 ]
Wang, Liguo [1 ]
Li, Yaqing [1 ]
机构：
[1] Xian Technol Univ, Sch Optoelect Engn, Xian 710021, Peoples R China
来源：
AIP ADVANCES | 2020年 / 10卷 / 03期
基金：
中国国家自然科学基金;
关键词：
DOPANT;
D O I：
10.1063/1.5142889
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A contactless and non-destructive method for the determination of the doping concentration of heavily doped silicon wafers is proposed. The method is based on a comparison between photocarrier radiometry signals acquired from different surfaces of samples and a comprehensive mathematical model by exploiting photon reabsorption in photocarrier radiometry measurements. With the proposed mathematical model, the influence of experimental and sample parameters on the measurement of the doping concentration is analyzed in detail. The uncertainties and limitations of the method are also discussed. Furthermore, an experimental configuration is proposed. (C) 2020 Author(s).
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收藏
页数：10
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