High-throughput computational screening of Sb-Te binary alloys for phase-change storage applications

被引:6
|
作者
Peng, Shuo [1 ]
Tan, Zhi-Long [2 ]
Zhang, Jun-Min [1 ]
Wang, Chuan-Jun [2 ]
Wen, Ming [2 ]
Zhao, Zong-Yan [1 ]
机构
[1] Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Kunming 650093, Yunnan, Peoples R China
[2] Kunming Inst Precious Met, State Key Lab Adv Technol Comprehens Utilizat Pla, Kunming 650106, Yunnan, Peoples R China
关键词
Phase change storage materials; High-throughput first-principle  calculations; Ab initio molecular dynamics  simulations; Sb-Te binary alloys; Solid solutions; Intermetallic compounds; CHANGE MEMORY; TOPOLOGICAL INSULATOR; SB2TE3; FILMS; THIN-FILMS; DESIGN; CRYSTALLIZATION; PRINCIPLES; LASER;
D O I
10.1016/j.jmrt.2021.10.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As phase change materials (PCMs), Sb-Te based alloys have received a lot of attention in recent years. However, the mechanism for the formation of the alloy and its application as PCMs is not fully understood. The high-throughput First-principles calculations and melt-quench ab initio molecular dynamics simulations were adopted to explore the micro-structure and properties of Sb-Te alloys in this work. The hetero-atomic interaction and disordered distribution make Sb-Te alloy with layered microstructure more stable. Although Sb1_xTex solid solution is the metastable phase, it is still stable for PCMs in the certain ranges of solid solubility (0.4 < x < 0.6). In this range, it has two distinct electrical states between crystalline and amorphous states, the strong isotropy in electric conduc-tivity, and strong quasi two-dimensionality of the electronic states. Therefore, Sb1_xTex (0.4 < x < 0.6) solid solution and SbTe intermetallic compound are also potential candidates for PCMs worth considering in addition to Sb2Te3 intermetallic compound. (c) 2021 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
引用
收藏
页码:4243 / 4256
页数:14
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