Criteria for Using Antiparallel SiC SBDs With SiC MOSFETs for SiC-Based Inverters

The paper confirms that removing antiparallel silicon carbide (SiC) Schottky barrier diodes (SBDs) from SiC-based inverters offers positive effects without critical impact on inverter loss and electromagnetic interference (EMI) issues, moreover, the removal of SBDs reduces the inverter losses in many cases and noise emissions. This conclusion leads to the possibility to improve the power densities by removing SBDs. However, the removal of SBDs may cause some disadvantages such as an increase of the reverse conduction loss and influence of the body diode recovery phenomenon. Therefore, a comprehensive investigation of these advantages and disadvantages is necessary. In this paper, design criteria are proposed to clarify the conditions in which SiC-based inverters without SBDs have advantages over those with SBDs from the viewpoint of losses. On the other hand, to achieve the removal of SBDs, it is also necessary to confirm that removing SBDs does not cause severe EMI issues. The paper confirms that switching noises are reduced by the removal of SBDs; this is due to the larger damping effect of the SiC MOSFETs without SBDs than that of SiC MOSFETs with SBDs. The validity of the theoretical analyses and design criteria is confirmed with comprehensive experimental results.