Switches with double carrier confinement structures for multiple-valued logic applications

被引：0

作者：

Guo, DF ^{[1
]}

机构：

[1] Chinese Air Force Acad, Dept Elect Engn, Kaohsiung, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 08期

关键词：

D O I：

10.1088/0268-1242/13/8/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two switching devices with different double carrier confinement structures were fabricated. One is a GaAs switch with double InGaP barriers, another with double GaAs-InGaAs delta-doped (delta-doped) quantum wells. In the characteristics of the former, because of the two-step barrier lowering induced by the processes of the carrier charging to the injection junction and carrier confinement in wells, a double S-shaped negative differential resistance (NDR) phenomenon is observed after the onsets of successive avalanche multiplications. However, only a single NDR performance is obtained in the characteristics of the latter due to one-step barrier lowering, even though successive avalanche multiplications also occur in the device operation.

引用

页码：957 / 962

页数：6

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