共 50 条
- [1] Tunable Charge-Trap Memory Based on Few-Layer MoS2[J]. ACS NANO, 2015, 9 (01) : 612 - 619Zhang, Enze论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaWang, Weiyi论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhang, Cheng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaJin, Yibo论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China论文数: 引用数: h-index:机构:Sun, Qingqing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaZhou, Peng论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R ChinaXiu, Faxian论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
- [2] Space charge limited current and photoconductive effect in few-layer MoS2[J]. 9TH YOUNG RESEARCHER MEETING, 2019, 1226Grillo, A.论文数: 0 引用数: 0 h-index: 0机构: Univ Salerno, Phys Dept ER Caianiello, Via Giovanni Paolo II 132, I-84084 Salerno, Italy Univ Salerno, Phys Dept ER Caianiello, Via Giovanni Paolo II 132, I-84084 Salerno, ItalyGiubileo, F.论文数: 0 引用数: 0 h-index: 0机构: CNR SPIN, Via Giovanni Paolo II 132, I-84084 Salerno, Italy Univ Salerno, Phys Dept ER Caianiello, Via Giovanni Paolo II 132, I-84084 Salerno, Italy论文数: 引用数: h-index:机构:Luongo, G.论文数: 0 引用数: 0 h-index: 0机构: Univ Salerno, Phys Dept ER Caianiello, Via Giovanni Paolo II 132, I-84084 Salerno, Italy CNR SPIN, Via Giovanni Paolo II 132, I-84084 Salerno, Italy Univ Salerno, Phys Dept ER Caianiello, Via Giovanni Paolo II 132, I-84084 Salerno, Italy论文数: 引用数: h-index:机构:Di Bartolomeo, A.论文数: 0 引用数: 0 h-index: 0机构: Univ Salerno, Phys Dept ER Caianiello, Via Giovanni Paolo II 132, I-84084 Salerno, Italy Univ Salerno, Phys Dept ER Caianiello, Via Giovanni Paolo II 132, I-84084 Salerno, Italy
- [3] Charge-Transfer Interaction between Few-Layer MoS2 and Tetrathiafulvalene[J]. CHEMISTRY-AN ASIAN JOURNAL, 2013, 8 (08) : 1780 - 1784Dey, Sunita论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, CSIR Ctr Excellence Chem, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, IndiaMatte, H. S. S. Ramakrishna论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, CSIR Ctr Excellence Chem, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, IndiaShirodkar, Sharmila N.论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, IndiaWaghmare, Umesh V.论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, IndiaRao, C. N. R.论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, CSIR Ctr Excellence Chem, Bangalore 560064, Karnataka, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, ICMS, Bangalore 560064, Karnataka, India
- [4] Heat dissipation in few-layer MoS2 and MoS2/hBN heterostructure[J]. 2D MATERIALS, 2022, 9 (01)Arrighi, Alois论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain Univ Autonoma Barcelona, Dept Fis, E-08193 Barcelona, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spaindel Corro, Elena论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainNavarro Urrios, Daniel论文数: 0 引用数: 0 h-index: 0机构: Univ Barcelona, Fac Fis, Dept Engn Elect & Biomed, MIND IN2UB, Marti & Franques 1, Barcelona 08028, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainVasile Costache, Marius论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainFrancisco Sierra, Juan F.论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainWatanabe, Kenji论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainTaniguchi, Takashi论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainGarrido, Jose A.论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain ICREA, Pg Lluis Companys 23, Barcelona 08010, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainValenzuela, Sergio O.论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain ICREA, Pg Lluis Companys 23, Barcelona 08010, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainSotomayor Torres, Clivia M.论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain ICREA, Pg Lluis Companys 23, Barcelona 08010, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, SpainSledzinska, Marianna论文数: 0 引用数: 0 h-index: 0机构: CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain BIST, Campus UAB, Barcelona 08193, Spain CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain
- [5] Velocity saturation in few-layer MoS2 transistor[J]. APPLIED PHYSICS LETTERS, 2013, 103 (23)论文数: 引用数: h-index:机构:Szafranek, Bartholomaeus N.论文数: 0 引用数: 0 h-index: 0机构: AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, ItalyIannaccone, Giuseppe论文数: 0 引用数: 0 h-index: 0机构: Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, ItalyNeumaier, Daniel论文数: 0 引用数: 0 h-index: 0机构: AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy
- [6] Davydov splitting and polytypism in few-layer MoS2[J]. 2D MATERIALS, 2019, 6 (01)Na, Woongki论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Phys, Seoul 04107, South Korea Sogang Univ, Dept Phys, Seoul 04107, South KoreaKim, Kangwon论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Phys, Seoul 04107, South Korea Sogang Univ, Dept Phys, Seoul 04107, South KoreaLee, Jae-Ung论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Phys, Seoul 04107, South Korea Sogang Univ, Dept Phys, Seoul 04107, South KoreaCheong, Hyeonsik论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Phys, Seoul 04107, South Korea Sogang Univ, Dept Phys, Seoul 04107, South Korea
- [7] Photogating of mono- and few-layer MoS2[J]. APPLIED PHYSICS LETTERS, 2015, 106 (12)Miller, Bastian论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Dept Phys, D-85748 Garching, Germany NIM, D-80799 Munich, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyParzinger, Eric论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Dept Phys, D-85748 Garching, Germany NIM, D-80799 Munich, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyVernickel, Anna论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Dept Phys, D-85748 Garching, Germany NIM, D-80799 Munich, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyHolleitner, Alexander W.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Dept Phys, D-85748 Garching, Germany NIM, D-80799 Munich, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, GermanyWurstbauer, Ursula论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany Tech Univ Munich, Dept Phys, D-85748 Garching, Germany NIM, D-80799 Munich, Germany Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
- [8] Few-layer MoS2 as nitrogen protective barrier[J]. NANOTECHNOLOGY, 2017, 28 (41)Akbali, B.论文数: 0 引用数: 0 h-index: 0机构: Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey Izmir Inst Technol, Dept Phys, TR-35430 Izmir, TurkeyYanilmaz, A.论文数: 0 引用数: 0 h-index: 0机构: Izmir Inst Technol, Dept Mat Sci & Engn, TR-35430 Izmir, Turkey Izmir Inst Technol, Dept Phys, TR-35430 Izmir, TurkeyTomak, A.论文数: 0 引用数: 0 h-index: 0机构: Izmir Inst Technol, Dept Mat Sci & Engn, TR-35430 Izmir, Turkey Izmir Inst Technol, Dept Phys, TR-35430 Izmir, TurkeyTongay, S.论文数: 0 引用数: 0 h-index: 0机构: Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA Izmir Inst Technol, Dept Phys, TR-35430 Izmir, TurkeyCelebi, C.论文数: 0 引用数: 0 h-index: 0机构: Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey Izmir Inst Technol, Dept Phys, TR-35430 Izmir, TurkeySahin, H.论文数: 0 引用数: 0 h-index: 0机构: Izmir Inst Technol, Dept Photon, TR-35430 Izmir, Turkey Izmir Inst Technol, ECAR, ICTP, TR-35430 Izmir, Turkey Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey
- [9] Electrostatic properties of few-layer MoS2 films[J]. AIP ADVANCES, 2013, 3 (04):Hao, Guolin论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaHuang, Zongyu论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaLiu, Yundan论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaQi, Xiang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaRen, Long论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaPeng, Xiangyang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaYang, Liwen论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaWei, Xiaolin论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R ChinaZhong, Jianxin论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
- [10] Thermal conductivity of suspended few-layer MoS2[J]. NANOSCALE, 2018, 10 (06) : 2727 - 2734论文数: 引用数: h-index:机构:Hu, Shiqian论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaWang, Chengru论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaXi, Qing论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaCheng, Zhaofang论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Sch Sci, Dept Opt Informat Sci & Technol, Xian 710049, Shaanxi, Peoples R China Xi An Jiao Tong Univ, Sch Sci, Dept Appl Phys, Xian 710049, Shaanxi, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaXia, Minggang论文数: 0 引用数: 0 h-index: 0机构: Xi An Jiao Tong Univ, Sch Sci, Dept Opt Informat Sci & Technol, Xian 710049, Shaanxi, Peoples R China Xi An Jiao Tong Univ, Sch Sci, Dept Appl Phys, Xian 710049, Shaanxi, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaMa, Yanling论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaWu, Jianbo论文数: 0 引用数: 0 h-index: 0机构: Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaGuo, Jie论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaWang, Qilang论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaZhou, Jun论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaChen, Jie论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaXu, Xiangfan论文数: 0 引用数: 0 h-index: 0机构: Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, China EU Joint Ctr Nanophonon, Shanghai 200092, Peoples R China Tongji Univ, Shanghai Key Lab Special Artificial Microstruct M, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R ChinaLi, Baowen论文数: 0 引用数: 0 h-index: 0机构: Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA Tongji Univ, Sch Phys Sci & Engn, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China