The role of dislocations as nonradiative recombination centers in InGaN quantum wells

被引：65
|
作者：
Abell, Josh [1 ]
Moustakas, T. D. [1 ]
机构：
[1] Boston Univ, Dept Elect & Comp Engn, Ctr Photon Res, Boston, MA 02215 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期
关键词：
D O I：
10.1063/1.2889444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaN multiple quantum wells (MQWs) were grown on atomically smooth c-GaN templates and identical c-GaN templates etched to reveal hexagonal pits associated with screw dislocations. We found that the room temperature internal quantum efficiency of the MQWs grown on the etched c-GaN templates is a factor of 2 higher than that of the smooth QWs. This finding is accounted for by the fact that the QWs on the nonplanar surfaces are thinner than the c-plane QWs, and thus the carriers are prevented from reaching the dislocations due to the energy barrier around each defect.
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页数：3
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