A Review on the CMP of SiC and Sapphire Wafers

被引：10
|
作者：
Wang, Yongguang [1 ]
Zhang, L. C. [1 ]
机构：
[1] Univ New S Wales, Sch Mech & Mfg Engn, Sydney, NSW 2052, Australia
来源：
ADVANCES IN ABRASIVE TECHNOLOGY XIII | 2010年 / 126-128卷
关键词：
Brittle wafer; CMP; Silicon carbide; Sapphire; POLYCRYSTALLINE DIAMOND; DYNAMIC FRICTION; ALUMINA; DAMAGE;
D O I：
10.4028/www.scientific.net/AMR.126-128.429
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chemo-mechanical polishing (CMP) has been a useful method to produce superior brittle wafer surfaces. This paper reviews the CMP of silicon carbide and sapphire wafers, focusing on efficiency of the polishing rate. The effects of slurry type, slurry pH value and mixed abrasives will be discussed in detail.
引用
收藏
页码：429 / 434
页数：6
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