Low-damage dry-etched grating on an MQW active layer and dislocation-free InP regrowth for 1.55-μm complex-coupled DFB lasers fabrication

被引：31

作者：

Talneau, A ^{[1
]}

Bouadma, N ^{[1
]}

Lebellego, Y ^{[1
]}

Slempkes, S ^{[1
]}

Ougazzaden, A ^{[1
]}

Patriarche, G ^{[1
]}

Sermage, B ^{[1
]}

机构：

[1] France Telecom, CNET, DTD, F-92225 Bagneux, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 08期

关键词：

complex coupling; DFB lasers; gain grating; InP-based AP-MOVPE materials; RIBE etching;

D O I：

10.1109/68.701505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A grating dry-etched through the upper wells of a multiquantum-well active layer has been characterized before and after regrowth. TEM observation and carrier lifetime measurements have shown growth-free defects of the epitaxial layers, As a consequence, quasi-100% monomode oscillation on lambda + 1 mode has been achieved on complex-coupled distributed-feedback lasers fabricated with such grating.

引用

页码：1070 / 1072

页数：3

共 5 条

[1] Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55μm complex-coupled DFB lasers fabrication
Talneau, A
Bouadma, N
Lebellego, Y
Slempkes, S
Ougazzaden, A
Patriarche, G
Sermage, B
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 288 - 291
[2] High performance and high reliability of 1.55-μm current-blocking grating complex-coupled DFB lasers
Chunghwa Telecom Co, Ltd, Taoyuan, Taiwan
IEEE Photonics Technol Lett, 9 (1238-1240):
[3] High performance and high reliability of 1.55-μm current-blocking grating complex-coupled DFB lasers
Shiao, HP
Wang, CY
Shih, TT
Tu, YK
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (09) : 1238 - 1240
[4] Very-low-threshold, highly efficient, and low-chirp 1.55-mu m complex-coupled DFB lasers with a current-blocking grating
Chuang, ZM
Wang, CY
Lin, W
Liao, HH
Su, JY
Tu, YK
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (11) : 1438 - 1440
[5] TRANSFER-MATRIX DYNAMIC-MODEL OF PARTLY GAIN-COUPLED 1.55 MU-M DFB LASERS WITH A STRAINED-LAYER MQW ACTIVE GRATING
MAKINO, T
LU, H
LI, GP
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (11) : 2443 - 2448

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