Remote epitaxy of copper on sapphire through monolayer graphene buffer

被引:27
|
作者
Lu, Zonghuan [1 ,2 ]
Sun, Xin [1 ,2 ]
Xie, Weiyu [1 ]
Littlejohn, Aaron [1 ]
Wang, Gwo-Ching [1 ,2 ]
Zhang, Shengbai [1 ]
Washington, Morris A. [1 ,2 ]
Lu, Toh-Ming [1 ,2 ]
机构
[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, cMDIS, Troy, NY 12180 USA
关键词
graphene transparency; remote epitaxy; van der Waals epitaxy; single crystal graphene; copper thin film; SURFACE HYDROXYL-GROUPS; DER-WAALS EPITAXY; RAMAN-SPECTROSCOPY; GROWTH; TRANSPARENT; FILMS; INTERCONNECT; TEMPERATURE; RESISTIVITY; MECHANISM;
D O I
10.1088/1361-6528/aadb78
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, we show that remote heteroepitaxy can be achieved when Cu thin film is grown on single crystal, monolayer graphene buffered sapphire(0001) substrate via a thermal evaporation process. X-ray diffraction and electron backscatter diffraction data show that the epitaxy process forms a prevailing Cu crystal domain, which is remotely registered in-plane to the sapphire crystal lattice below the monolayer graphene, with the (111) out-of-plane orientation. As a poor metal with zero density of states at its Fermi level, monolayer graphene cannot totally screen out the stronger charge transfer/metallic interactions between Cu and substrate atoms. The primary Cu domain thus has good crystal quality as manifested by a narrow crystal misorientation distribution. On the other hand, we show that graphene interface imperfections, such as bilayers/multilayers, wrinkles and interface contaminations, can effectively weaken the atomic interactions between Cu and sapphire. This results in a second Cu domain, which directly grows on and follows the graphene hexagonal lattice symmetry and orientation. Because of the weak van der Waals interaction between Cu and graphene, this domain has inferior crystal quality. The results are further confirmed using graphene buffered spinel(111) substrate, which indicates that this remote epitaxial behavior is not unique to the Cu/sapphire system.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Mechanism of remote epitaxy of stanene on Cu(111) substrate through monolayer graphene linking
    Wu, Pingru
    Liu, Xingen
    Liang, Qifeng
    Liu, Zhun
    JOURNAL OF APPLIED PHYSICS, 2022, 131 (20)
  • [2] Remote epitaxy of GaN via graphene on GaN/sapphire templates
    Badokas, Kazimieras
    Kadys, Arunas
    Mickevicius, Juras
    Ignatjev, Ilja
    Skapas, Martynas
    Stanionyte, Sandra
    Radiunas, Edvinas
    Juska, Giedrius
    Malinauskas, Tadas
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (20)
  • [3] Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer
    Lu, Zonghuan
    Sun, Xin
    Washington, Morris A.
    Lu, Toh-Ming
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (09)
  • [4] EPITAXY OF COPPER ON SAPPHIRE
    KATZ, G
    APPLIED PHYSICS LETTERS, 1968, 12 (05) : 161 - &
  • [5] EPITAXY OF COPPER ON SAPPHIRE
    KATZ, G
    AMERICAN CERAMIC SOCIETY BULLETIN, 1968, 47 (04): : 393 - &
  • [6] A first-principles study on remote van der Waals epitaxy through a graphene monolayer on semiconductor substrates
    侯锐
    杨身园
    Chinese Physics B, 2023, (06) : 540 - 549
  • [7] A first-principles study on remote van der Waals epitaxy through a graphene monolayer on semiconductor substrates
    Hou, Rui
    Yang, Shenyuan
    CHINESE PHYSICS B, 2023, 32 (06)
  • [8] Epitaxy of CdTe on sapphire substrates with titanium buffer layers
    A. E. Muslimov
    A. V. Butashin
    V. M. Kanevsky
    V. A. Babaev
    N. M.-R. Alikhanov
    Crystallography Reports, 2017, 62 : 455 - 459
  • [9] Epitaxy of CdTe on Sapphire Substrates with Titanium Buffer Layers
    Muslimov, A. E.
    Butashin, A. V.
    Kanevsky, V. M.
    Babaev, V. A.
    Alikhanov, N. M. -R.
    CRYSTALLOGRAPHY REPORTS, 2017, 62 (03) : 455 - 459
  • [10] GaN remote epitaxy on a pristine graphene buffer layer via controlled graphitization of SiC
    Lee, Seokje
    Kim, Jekyung
    Park, Bo-In
    Kim, Han Ik
    Lim, Changhyun
    Lee, Eunsu
    Yang, Jeong Yong
    Choi, Joonghoon
    Hong, Young Joon
    Chang, Celesta S.
    Kum, Hyun S.
    Kim, Jeehwan
    Lee, Kyusang
    Kim, Hyunseok
    Yi, Gyu-Chul
    APPLIED PHYSICS LETTERS, 2024, 125 (25)