A DC Solid-State Circuit Breaker Based on Transient Current Commutation

被引:0
|
作者
Kheirollahi, Reza [1 ]
Zhang, Hua [1 ]
Zhao, Shuyan [1 ]
Lu, Fei [1 ]
机构
[1] Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USA
关键词
Active injection circuit (AIC); solid-state circuit breakers (SSCBs); transient current commutation (TCC); ENERGY-ABSORPTION; SIC MOSFETS;
D O I
10.1109/JESTPE.2021.3116605
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article proposes a new dc solid-state circuit breaker (SSCB) based on silicon carbide (SiC) MOSFETs. There are two main contributions. First, a transient current commutation (TCC) is obtained in the main switch during current interruption. To achieve this, a compact and fast active injection circuit (AIC) is employed. TCC brings two main benefits: 1) it eliminates the effects of parasitic inductances in circuit connections and removes voltage oscillations on the gate of the main switch, which prevents spurious turn-on and 2) it eliminates the transient power shock on the switch during turn-off, which extends the lifetime of SSCB and increases its reliability. Second, the voltage on the employed metal oxide varistor (MOV) is reduced to zero during the OFF-state. This extends the maximum allowable dc bus voltage on the SSCB and solves the MOV reliability issue in the SSCBs. The presented SSCB employs a time-sequence control and needs no real-time detections of the dc current, which simplify the design. LTspice simulations of 380 V/80 A and 600 V/80 A are presented, and the results are compared with MOV- and MOV resistor-capacitor-diode (MOV-RCD)-based SSCBs. Also, experiments of a 380 V/80 A prototype validate the effectiveness of the proposed SSCB in practice where the voltage on the SSCB is clamped to 721 V with a fixed response time of 9.4 mu s .
引用
收藏
页码:4614 / 4625
页数:12
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