Characterisation of nitride thin films by electron backscattered diffraction

被引：11
|
作者：
Trager-Cowan, C
Manson-Smith, SK
Cowan, DA
Sweeney, F
McColl, D
Mohammed, A
Timm, R
Middleton, PG
O'Donnell, KP
Zubia, D
Hersee, SD
机构：
[1] Univ Strathclyde, Dept Phys & Appl Phys, Glasgow G4 0NG, Lanark, Scotland
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87131 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期
关键词：
electron backscattered diffraction (EBSD); Kikuchi; diffraction; nitrides; GaN;
D O I：
10.1016/S0921-5107(00)00791-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we describe the technique of electron backscattered diffraction (EBSD) and illustrate its use in the characterisation of nitride thin films by describing our results from a silicon-doped 3 mum thick GaN epilayer grown on a sapphire substrate misoriented by 10 degrees towards the m-plane (10-10). We show that the EBSD technique may be used to reveal the relative orientation of an epilayer with respect to its substrate (a 90 degrees rotation between the GaN epilayer and sapphire substrate is observed) and to determine its tilt (the GaN epilayer was found to be tilted by 12 +/- 3 degrees towards [10-10](GaN)). (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：19 / 21
页数：3
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