Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes

被引：25
|
作者：
Wang, Dengkui [1 ,2 ]
Wang, Fei [1 ]
Wang, Yunpeng [1 ]
Fan, Yi [1 ]
Zhao, Bin [1 ,2 ]
Zhao, Dongxu [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130021, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2015年 / 119卷 / 05期
基金：
中国国家自然科学基金;
关键词：
ELECTRONIC-PROPERTIES; SIZE DEPENDENCE; ELECTROLUMINESCENCE; FABRICATION;
D O I：
10.1021/jp509655j
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ultraviolet (UV) light-emitting diodes (LEDs) were made by using ZnO quantum dots (QDs) as the emission layer. ZnO QDs with the diameter of 5 nm were fabricated by using a simple sintering method. By using p-GaN as the hole injection layer, a ZnO QDs/p-GaN heterojunction LED was constructed. Trap-controlled SCLC behavior of QDs led the LED to emit light mainly from the QDs layer, and the direct physical contact between ZnO QDs and GaN could effectively reduce the interfacial emission. As the result, a UV LED with the electroluminescence wavelength of 382 nm has been achieved.
引用
收藏
页码：2798 / 2803
页数：6
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