Disorder, spin-orbit, and interaction effects in dilute Ga1-xMnxAs -: art. no. 045212

被引:13
|
作者
Fiete, GA [1 ]
Zaránd, G
Damle, K
Moca, CP
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Univ Calif Santa Barbara, Kavli Inst Theoret Phys, Santa Barbara, CA 93106 USA
[3] Tech Univ Budapest, Phys Res Inst, H-1521 Budapest, Hungary
[4] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
[5] Tata Inst Fundamental Res, Dept Theoret Phys, Bombay 400005, Maharashtra, India
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.72.045212
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We derive an effective Hamiltonian for Ga1-xMnxAs in the dilute limit, where Ga1-xMnxAs can be described in terms of spin F=3/2 holes hopping between the Mn sites and coupled to the local Mn spins. We determine the parameters of our model from microscopic calculations using both a variational method and an exact diagonalization within the so-called spherical approximation. Our approach treats the extremely large Coulomb interaction in a nonperturbative way and captures the effects of strong spin-orbit coupling and Mn positional disorder. We study the effective Hamiltonian in a mean-field and variational calculation, including the effects of interactions between the holes at both zero and finite temperature. We study the resulting magnetic properties, such as the magnetization and spin-disorder manifest in the generically noncollinear magnetic state. We find a well-formed impurity band fairly well separated from the valence band up to x(active)less than or similar to 0.015 for which finite-size scaling studies of the participation ratios indicate a localization transition, even in the presence of strong on-site interactions, where x(active)< x(nom) is the fraction of magnetically active Mn. We study the localization transition as a function of hole concentration, Mn positional disorder, and interaction strength between the holes.
引用
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页数:14
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