Probing the electronic structure of bilayer graphene by Raman scattering

被引:289
|
作者
Malard, L. M. [1 ]
Nilsson, J.
Elias, D. C.
Brant, J. C.
Plentz, F.
Alves, E. S.
Castro Neto, A. H.
Pimenta, M. A.
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 20期
关键词
D O I
10.1103/PhysRevB.76.201401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of bilayer graphene is investigated from a resonant Raman study of the G(') band using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for bilayer graphene are obtained from the analysis of the dispersive behavior of the Raman features, and reveal the difference of the effective masses of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.
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页数:4
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