Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

被引：3
|
作者：
Nakamura, Naofumi [1 ]
Oda, Noriaki [1 ]
Soda, Eiichi [1 ]
Aoyama, Hajime [1 ]
Tanaka, Yuusuke [1 ]
Kawamura, Daisuke [1 ]
Hosoi, Nobuki [1 ]
Takigawa, Yukio [1 ]
Shiohara, Morio [1 ]
Kondo, Seiichi [1 ]
Mori, Ichiro [1 ]
Saito, Shuichi [1 ]
机构：
[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 02期
关键词：
BARRIER; TECHNOLOGY; RU; RELIABILITY; INTEGRATION; PLASMA; PROPERTY; FILM;
D O I：
10.1143/JJAP.50.026504
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A 70 nm pitch two-level interconnects have been successfully fabricated using extreme ultraviolet lithography (EUVL) (lambda = 13: 5 nm). EUVL enabled us to obtain fine pattern formation and usable overlay accuracy at each metal and via patterning. CF3I etching gas and ruthenium (Ru) barrier film deposited with physical vapor deposition (PVD) are key technologies for achieving good electrical properties. Very low effective resistivity of less than 4.5 mu Omega cm in 35-nm-width wiring was obtained by using PVD-Ru barrier film. Via resistance of 12.4 Omega for via-holes with diameter of 35nm was obtained. (C) 2011 The Japan Society of Applied Physics
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页数：7
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