Optical gain process in wide-gap semiconductors: possibilities of blue-light bi-exciton lasing in quantum-well and quantum-dot lasers

被引：7
|
作者：
Sugawara, M [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
bi-exciton; exciton; quantum dot; quantum well; optical gain; wide-gap semiconductor;
D O I：
10.1016/S0022-0248(98)00205-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We consider two gain theories which take into account the Coulomb interaction, i.e., the semiconductor Bloch equation and the three-level model including bi-exciton states. Based on the three-level model, we derive a formula for a linear bi-exciton gain. Using rate equations including excitons, bi-excitons, and cavity photons, we show possibilities and performance of blue-light bi-exciton lasing in quantum-well and quantum-dot lasers. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：585 / 592
页数：8
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