Preparation and properties of PLZT thick films on silicon

Lead-lanthanum-zirconate-titanate (PLZT) thick films were prepared on Pt/Ti/SiO2/Si substrates with PZT/PT seeding layer by the screen-printing method. Phase characterization and crystal orientation of the PUT thick films were investigated by X-ray diffraction analysis (XRD). The ferroelectric hysteresis loop, high-frequency dielectric constant, dielectric loss and piezoelectric constant of the PUT thick films were measured. The remnant polarization of the silicon-based PUT thick films was about 32 muC cm(-2), the coercive field was about 20 kV cm(-1) and the piezoelectric constant d(33) was about 630 pC N-1. In the frequency range from 1 to 300 MHz, the dielectric constant was about 3000 and the dielectric loss was less than 0.03, respectively. The PUT thick films with excellent ferroelectric, high frequency and force-electric coupling properties should be suitable for the ferroelectrics-silicon integrated system, and be a good candidate material for the third-generation (3G) mobile communication and the force-electric coupling microelectromechanical system (MEMS) device applications. (C) 2002 Elsevier Science B.V. All rights reserved.