High Performance LNA Devices for Integrated Switch Technology

被引：0

作者：

Ellis-Monaghan, John ^{[1
]}

Wolf, Randy ^{[1
]}

Stamper, Anthony ^{[1
]}

Jaffe, Mark ^{[1
]}

Abou-Khalil, Michel ^{[1
]}

Vallett, Aaron ^{[1
]}

Adusumilli, Siva ^{[1
]}

Shank, Steven ^{[1
]}

Phelps, Rick ^{[1
]}

Joseph, Alvin ^{[1
]}

Sundaram, Ananth ^{[2
]}

Vanukuru, Venkata ^{[2
]}

Swaminathan, Balaji ^{[2
]}

机构：

[1] GLOBALFOUNDRIES, RF Technol Dev, Essex Jt, VT 05452 USA

[2] GLOBALFOUNDRIES, RF Model Dev, Bangalore, Karnataka, India

来源：

2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年

关键词：

Low Noise Amplifier; LNA; SOI Switch; IIP3; SOI LNA; CMOS LNA;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Integration of high performance switch with Low Noise Amplifier (LNA) devices results in state of the art performance for 5G Front End Module applications. Here we review switch + LNA performance metrics and its evolution over the last 10 years and highlight directions for the future.

引用

页数：2

共 50 条

[1] A 130nm RFSOI Technology with Switch, LNA, and EDNMOS Devices for Integrated Front-End Module SoC Applications
Purakh, Raj Verma
Zhang, Shaoqiang
Tze, Toh Rui
Wong, Jen Shuang
Wei, Gao
Wai, Chew Kok
Nair, Rajesh
Harame, David
Watts, Josef
Mckay, Thomas
PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015), 2015, : 47 - 50
[2] High-Performance W-band LNA and SPDT Switch in 0.13μm SiGe HBT Technology
Ulusoy, A. Cagri
Schmid, Robert L.
Kaynak, Mehmet
Tillack, Bernd
Cressler, John D.
2015 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2015, : 162 - 164
[3] Design of High-Performance E-band SPDT Switch and LNA in 0.13 μm SiGe BiCMOS Technology
Ahamed, Raju
Varonen, Mikko
Parveg, Dristy
Saijets, Jan
Halonen, Kari A. I.
2017 IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS): NORCHIP AND INTERNATIONAL SYMPOSIUM OF SYSTEM-ON-CHIP (SOC), 2017,
[4] A Dual Mode Integrated. LNA and Switch for WLAN Receiver
Zhong, Liping
Zhang, Zhihao
Li, Jiajin
Liu, Zilin
Liu, Zuhua
Zhang, Gouhao
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 1354 - 1356
[5] High performance bio-integrated devices
Kim, Dae-Hyeong
Lee, Jongha
Park, Minjoon
MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS VI, 2014, 9083
[6] Science and Technology of Piezoelectric/Diamond Heterostructures for Monolithically Integrated High Performance MEMS/NEMS/CMOS Devices
Auciello, O.
Sumant, A. V.
Hiller, J.
Kabius, B.
Ma, Z.
Srinivasan, S.
2008 17TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, 2008, : 241 - +
[7] Integrated Devices for High-Performance Optical Links
Ziari, M.
Evans, P.
Lal, V.
Corzine, S.
Butrie, T.
Missey, M.
Pavinski, D.
Tang, J.
Summers, J.
Studenkov, P.
Vallaitas, T.
Kuntz, M.
Sedgwick, F.
Fisher, M.
Sai, H. -S
Zhang, J.
Samra, P.
Pleumeekers, J.
Rahn, J.
Dominic, V.
Schindler, P.
Schmogrow, R.
Kumar, S.
Sun, H.
Wu, K-T.
Mitchell, M.
Kauffman, M.
Reffle, M.
Kish, F.
Welch, D.
2015 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2015,
[8] An advanced packaging technology for high performance power devices
Ozmat, B
Temple, VAK
Azotea, JK
IECEC-97 - PROCEEDINGS OF THE THIRTY-SECOND INTERSOCIETY ENERGY CONVERSION ENGINEERING CONFERENCE, VOLS 1-4: VOL.1: AEROSPACE POWER SYSTEMS AND TECHNOL; VOL 2: ELECTROCHEMICAL TECHNOL, CONVERSION TECHNOL, THERMAL MANAGEMENT; VOLS 3: ENERGY SYSTEMS, RENEWABLE ENERGY RESOURCES, ENVIRONMENTAL IMPACT, POLICY IMPACTS ON ENERGY; VOL 4: POST DEADLINE PAPERS, INDEX, 1997, : 687 - 693
[9] 5 GHz 1.4 dB NFCMOS LNA integrated in 130 rim high resistivity SOI technology
Gianesello, F.
Gloria, D.
Raynaud, C.
Boret, S.
2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2, 2007, : 96 - 99
[10] Improvement in silicon on insulator devices using strained Si/SiGe technology for high performance in RF integrated circuits
Fathipour, Morteza
Omidbakhsh, Samira
Khodayari, Kimia
World Academy of Science, Engineering and Technology, 2010, 72 : 461 - 464

← 1 2 3 4 5 →