Sic nanowires grown on silicon (100) wafer by MPCVD method

被引：2
|
作者：
Hu, Y [1 ]
机构：
[1] Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China
来源：
ACTA PHYSICA SINICA | 2001年 / 50卷 / 12期
关键词：
MPCVD; SiC nanowires; growth mechanism;
D O I：
10.7498/aps.50.2452
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Silicon carbide nanowires have been grown on single crystal silicon wafers by using microwave plasma chemical vapor deposition method. The nanowires are analyzed by scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy and low-energy electron diffraction methods. The growth mechanism of nanowires is proposed.
引用
收藏
页码：2452 / 2455
页数：4
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