Defect Engineering in Solution-Processed Polycrystalline SnSe Leads to High Thermoelectric Performance

被引:75
|
作者
Liu, Yu [1 ]
Calcabrini, Mariano [1 ]
Yu, Yuan [2 ]
Lee, Seungho [1 ]
Chang, Cheng [1 ]
David, Jeremy [3 ,4 ]
Ghosh, Tanmoy [1 ]
Chiara Spadaro, Maria [3 ,4 ]
Xie, Chenyang [5 ,6 ]
Cojocaru-Miredin, Oana [2 ]
Arbiol, Jordi [3 ,4 ]
Ibanez, Maria [1 ]
机构
[1] IST Austria, A-3400 Klosterneuburg, Austria
[2] Rhein Westfal TH Aachen, Phys Inst IA 1, D-52074 Aachen, Germany
[3] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Barcelona 08193, Spain
[4] BIST, Barcelona 08193, Spain
[5] Univ Politecn Cataluna, INTE, Dept Phys, Barcelona 08930, Catalunya, Spain
[6] Univ Politecn Cataluna, Barcelona Multiscale Res Ctr, Barcelona 08930, Catalunya, Spain
基金
欧盟地平线“2020”;
关键词
tin selenide; nanocomposite; grain growth; Zener pinning; thermoelectricity; annealing; solution processing; P-TYPE; THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; FIGURE; MERIT; ALKAHEST; CHARGE; ZT;
D O I
10.1021/acsnano.1c06720
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
SnSe has emerged as one of the most promising materials for thermoelectric energy conversion due to its extraordinary performance in its single-crystal form and its low-cost constituent elements. However, to achieve an economic impact, the polycrystalline counterpart needs to replicate the performance of the single crystal. Herein, we optimize the thermoelectric performance of polycrystalline SnSe produced by consolidating solution-processed and surface-engineered SnSe particles. In particular, the SnSe particles are coated with CdSe molecular complexes that crystallize during the sintering process, forming CdSe nanoparticles. The presence of CdSe nanoparticles inhibits SnSe grain growth during the consolidation step due to Zener pinning, yielding a material with a high density of grain boundaries. Moreover, the resulting SnSe-CdSe nanocomposites present a large number of defects at different length scales, which significantly reduce the thermal conductivity. The produced SnSe-CdSe nanocomposites exhibit thermoelectric figures of merit up to 2.2 at 786 K, which is among the highest reported for solution-processed SnSe.
引用
收藏
页码:78 / 88
页数:11
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