Preparation and properties of highly c-axis oriented Sr0.6Ba0.4Nb2O6 thin films by the Sol-Gel process

Highly oriented ferroelectric strontium barium niobate (Sr(0.6)Ba0.4Nb(2)O(6)) thin films were prepared on P-type Si(100) substrate by the Sol-Gel process. The XRD patterns of the SBN films show that SBN film prepared by using NbCl5, KOH as raw materials performed a highly c-axis preferred orientation perpendicular to the Si substrate, better than films that was prepared using Nb(OC2H5)(5) as starting agents. It may be duo to the existence of the potassium ion that not be filtered out completely during the preparation of the niobium alkoxide. The characteristics of D-F and C-V curves were obtained for SBN/Si film. The film exhibits high dielectric constant. In order to investigate ferroelectric characteristics further, the P-E loops of the SBN/Pt/Si were also measured. The films show better optical properties, transmittance of Sr0.6Ba0.4Nb2O6 films on MgO(001) and SiO2 substrates was more than 60 % at the range from 450 to 850nm, refractive index was measured to be 2.14 and 2.12 on the MgO and SiO2 substrate at 633nm respectively.