Domain wall structures in the two-dimensional Hubbard model with long-range Coulomb interaction

被引:0
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作者
Seibold, G [1 ]
Castellani, C [1 ]
Di Castro, C [1 ]
Grilli, M [1 ]
机构
[1] BTU Cottbus, Inst Phys, D-03013 Cottbus, Germany
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The structure and stability of partially filled domain walls is investigated in the two-dimensional Hubbard model supplemented with a long-range Coulomb interaction. Using an unrestricted Gutzwiller variational approach, we show that the strong local interaction favors charge segregation in stripe domain walls. This approach supports the stabilization of half-filled walls for commensurate doping and large values of U even without the long-range part in contrast to results of Hartree-Fock calculations. Inclusion of the long-range interaction favors the formation of half-filled vertical stripes also in the intermediate U regime. These walls are characterized by a period doubling due to the charge and a period quadrupling due to the spins along the wall. We find that, as well as the underlying lattice structure, there is also an electronic stabilization mechanism for half-filled vertical domain walls in La1.6-xNd0.4SrxCuO4.
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页码:151 / 157
页数:7
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