Effect of layer thickness on the luminescence properties of ZnS/CdS/ZnS quantum dot quantum well

被引：37
|
作者：
Cao, LX [1 ]
Huang, SH
Lü, SZ
Lin, JL
机构：
[1] Ocean Univ China, Inst Mat Sci & Engn, Qingdao 266003, Peoples R China
[2] Chinese Acad Sci, Lab Excited State Proc, Changchun 130021, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130021, Peoples R China
来源：
JOURNAL OF COLLOID AND INTERFACE SCIENCE | 2005年 / 284卷 / 02期
关键词：
quantum dot quantum well; ZnS; CdS;
D O I：
10.1016/j.jcis.2004.10.066
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnS/CdS/ZnS quantum dot quantum well was prepared. The optical properties of ZnS/CdS/ZnS QDQW with different thickness of US well and ZnS shell were studied, Absorption spectra, emission spectra, and luminescence lifetimes were measured. The observed luminescence was assigned to the bulk donor-acceptor pair recombination of CdS and can be enhanced by increasing the thickness of the CdS well or coating an appropriate thickness of ZnS shell on the surface of the US well. The luminescence enhancement was caused by the relative reduce in the surface effect. The luminescence lifetimes were influenced strongly by the surface state. (c) 2005 Elsevier Inc. All rights reserved.
引用
收藏
页码：516 / 520
页数：5
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