High performance, large area, uncooled detectors for mid-infrared wavelengths

被引：5
|
作者：
Crowder, JG [1 ]
Elliott, CT
Hardaway, HR
机构：
[1] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England
[3] Edinburgh Semicond Photon, Livingston EH54 7DQ, Scotland
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 02期
关键词：
Electric impedance measurement - Heterojunctions - Semiconducting indium compounds - Semiconductor diodes - Signal to noise ratio;
D O I：
10.1049/el:20010072
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The demonstration of D-* in excess of 2 x 10(9)cmHz(1/2)W(-1) from 1 mm diameter, uncooled, semiconductor diode detectors with a pak wavelength response at 5 mum is reported. They are based on heterostructures in the In1-xAlxSb alloy system and employ hyperspherical optical immersion. The devices have sufficiently high impedance for convenient amplifier matching, without signal-to-noise degradation, and the potential for high frequency response above 100 kHz.
引用
收藏
页码：116 / 118
页数：3
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