Properties of graphene produced by the high pressure-high temperature growth process

被引:51
|
作者
Parvizi, F. [1 ]
Teweldebrhan, D. [1 ]
Ghosh, S. [1 ]
Calizo, I. [1 ]
Balandin, A. A. [1 ,2 ]
Zhu, H. [3 ]
Abbaschian, R. [4 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Nandevice Lab, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Bourns Coll Engn, Mat Sci & Engn Program, Riverside, CA 92521 USA
[3] Gemesis Corp, Sarasota, FL 34240 USA
[4] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA
关键词
D O I
10.1049/mnl:20070074
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The authors report on a new method for the synthesis of graphene, a mono-layer of carbon atoms arranged in a honey comb lattice, and the assessment of the properties of obtained graphene layers using micro-Raman characterisation. Graphene was produced by a high pressure-high temperature (HPHT) growth process from the natural graphitic source material by utilising the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon-silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T + D and 2D bands in the Raman spectra under the 488 nm laser excitation indicate that the HPHT technique is capable of producing high-quality large-area single-layer graphene with a low defect density. The disorder-induced D peak similar to 1359 cm(-1) while very strong in the initial graphitic material is completely absent in the graphene layers. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.
引用
收藏
页码:29 / 34
页数:6
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