X-ray photoelectron spectroscopy investigation of the interaction of NF3 with silicon

The interaction of nitrogen trifluoride (NF3) with silicon (Si) surfaces has been investigated by x-ray photoelectron spectroscopy (XPS). Si(100) surfaces were subjected to NF3 ion bombardment as a means of approximating plasma processing under controlled conditions. Samples were also exposed to actual NF3 DC plasmas and the results compared to ion beam and plasma processing using nitrogen (N-2). The results indicate that nitridation of silicon is possible using NF3 although it seems to be limited by simultaneous etching. Additionally, results suggest bonding between both Si-F and Si-N species and perhaps F-N-Si moieties. NF3 plasma processing has lead to curious results for F 1s spectra which are not fully understood at present.