GaAs based micromachined thermal converter for gas sensors

被引：3

作者：

Lalinsky, T. ^{[1
]}

Drzik, A. ^{[2
]}

Jakovenko, J. ^{[3
]}

Vanko, G. ^{[1
]}

Mozolova, Z. ^{[1
]}

Hascik, S. ^{[1
]}

Chlpik, J. ^{[2
]}

Hotovy, I. ^{[4
]}

Rehacek, V. ^{[4
]}

Kostic, I. ^{[5
]}

Matay, L. ^{[5
]}

Husak, A. ^{[3
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[2] Ctr Int Laser, Bratislava 81219, Slovakia

[3] Czech Tech Univ Prague, Dept Microelect, Prague 16627 6, Czech Republic

[4] Slovak Tech Univ Bratislava, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia

[5] Slovak Acad Sci, Inst Informat, Bratislava 84239, Slovakia

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2008年 / 142卷 / 01期

关键词：

GaAs micromachining; GaAs thermal converter; gas sensor; MEMS; thermal resistance; thermal time constant;

D O I：

10.1016/j.sna.2007.05.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The micromachining technology and an electro-thermo-mechanical performance analysis of GaAs based micromachined thermal converter (MTC) device to be designed for metal oxide gas sensors are presented. MTC device introduced exhibits a low power consumption due to by high thermal resistance values (R-th = 15-21 K/mW), uniform temperature distribution, a fast temperature time response (tau similar to 1.5-1.8 ms), and good mechanical integrity and thermal stability. It is also fully compatible with the GaAs HEMT based signal-processing and controlling electronics to be monolithically integrated with the gas sensors. The both a simple analytical and three-dimensional thermal modeling of the MTC device was performed. It supported the high electro-thermal conversion efficiency and fast temperature time response of the MEMS device as evaluated by the experiments. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：147 / 152

页数：6

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