Ab initio molecular dynamics study of amorphous Ge

被引：9

作者：

Takeuchi, N

Garzon, IL

机构：

[1] Instituto de Frísica, Univ. Nac. Auton. de México, 228000 Ensenada, Baja California

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 06期

关键词：

semiconductors; structural properties; electronic states;

D O I：

10.1016/0038-1098(95)00809-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present results of a first-principles molecular dynamics study of amorphous Ge. The calculations are performed at the density of crystal Ge (c-Ge). Our computer generated network describes the structural and electronic properties of amorphous Ge in good agreement with experiments and previous calculations.

引用

页码：591 / 594

页数：4

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