Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications

被引：4

作者：

Luo, Qing ^{[1
]}

Chen, Bing ^{[2
]}

Cao, Rongrong ^{[1
]}

Xue, Xiaoyong ^{[3
]}

Zhou, Keji ^{[3
]}

Yang, Jianguo ^{[1
]}

Zheng, Xu ^{[1
]}

Yu, Haoran ^{[1
]}

Yu, Jie ^{[1
]}

Gong, Tiancheng ^{[1
]}

Xu, Xiaoxin ^{[1
]}

Yuan, Peng ^{[1
]}

Li, Xiaoyan ^{[1
]}

Tai, Lu ^{[1
]}

Liu, Qi ^{[1
]}

Lv, Hangbing ^{[1
]}

Liu, Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R China

[2] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou, Peoples R China

[3] Fudan Univ, State Key Lab ASIC & Syst, Shanghai, Peoples R China

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1109/iedm19573.2019.8993545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we proposed a complementary memory cell with 2T4D XNOR structure for computing in memory (CIM) applications. Firstly, a field-programmable diode (FPD) was demonstrated with a W/Hf0 5Zr0 5O2(HZO)/W structure. After analyzing the mechanism of FPD device, a 1T2D structure was proposed for voltage-output memory application featuring stable voltage ratio (similar to 0.9 V), read disturbance immunity (>10(9)) and ultra-low leakage current (<5 pA). For binary neuron network (BNN) application, a 2T4D XNOR cell-based CSA-free BNN architecture is proposed with small cell area (16 F-2) and superior efficiency (387 TOPS/W).

引用

页数：4

共 22 条

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