Study of Niobium Mononitride Thin Films Grown Using High Power Impulse Magnetron Sputtering

被引:1
|
作者
Kalal, Shailesh [1 ]
Kumar, Yogesh [1 ]
Karmakar, Suman [1 ]
Gupta, Surbhi [2 ]
Vas, Joseph Vimal [3 ]
Rawat, Rajeev [1 ]
Gupta, Mukul [1 ]
机构
[1] UGC DAE Consortium Sci Res, Univ Campus Khandwa Rd, Indore 452001, India
[2] Nanyang Technol Univ, Natl Inst Educ, Nat Sci & Sci Educ, Singapore 637616, Singapore
[3] Nanyang Technol Univ, Natl Univ Singapore, Sorbonne Univ, Univ Cote Azur,CNRS,MajuLab,Int Joint Res Unit UM, Singapore, Singapore
来源
关键词
high power impulse magnetron sputtering; microstructrures; NbN thin films; point defefcts; supercondcutivity; SUBSTRATE; HIPIMS; NITRIDES; COATINGS; BARRIER; DC;
D O I
10.1002/pssr.202100514
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Herein, the effect of microstructure on the electronic, and superconducting properties of niobium mononitride (NbN) thin films grown using a high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dcMS) is studied. X-ray reflectivity, cross-sectional scanning electron microscopy and atomic force microscopy measurements suggest that the film grown with dcMS has a non-uniform distribution of islands with loosely packed columns while the HiPIMS grown film has a smoother surface and a denser microstructure. Although the X-ray diffraction measurements show a single-phase rock-salt-type crystal structure in both cases, the local and electronic structure analyzed using N K-edge X-ray absorption near edge structure measurements reveals the evidence of a large amount of Nb vacancies in dcMS-NbN while HiPIMS-NbN film is closer to stoichiometry. The ordered structure of HiPIMS-NbN sample results in a relatively higher superconducting transition temperature of 15.2 K and lower normal state resistivity of 90 mu omega cm with a moderate critical field of 18 T and smaller coherence length of 4.2 nm. These results suggest HiPIMS can be utilized to grow high-quality superconducting thin films of few nanometers required in modern technological devices such as single-photon detectors, superconducting quantum interference devices.
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页数:6
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