High resistivity SOI substrates: how high should we go?

被引：0

|

作者：

Lederer, D ^{[1
]}

Desrumeaux, C ^{[1
]}

Brunier, F ^{[1
]}

Raskin, JP ^{[1
]}

机构：

[1] Univ Catholique Louvain, Microwave Lab, B-1348 Louvain, Belgium

来源：

2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：50 / 51

页数：2

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