Determination of the thickness of Al oxide films used as barriers in magnetic tunneling junctions

被引：35
|
作者：
Zhu, W
Hirschmugl, CJ
Laine, AD
Sinkovic, B
Parkin, SSP
机构：
[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
[2] Univ Wisconsin, Dept Phys, Milwaukee, WI 53201 USA
[3] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期
关键词：
D O I：
10.1063/1.1372619
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminum films oxidized in oxygen atmosphere are widely used in magnetic tunneling junctions (MTJs). We have determined the oxidation depth of these films by Fourier transform infrared (FTIR) spectroscopy in reflection-absorption mode. The oxide/Al interfaces are found to be abrupt and the thickness of the oxide layer increases slowly with exposure to oxygen, after a rapid onset. These results provide a physical picture of observed changes in the magnetotransport of MTJs as a function of Al thickness and oxidation time. The results also agree well with the empirically found optimum oxide growth condition which yields a maximum magnetoresistance. (C) 2001 American Institute of Physics.
引用
收藏
页码：3103 / 3105
页数：3
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