Study of the properties of ZnO thin films prepared by DC magnetron sputtering

被引：0

作者：

Zhao, Zhiwei ^{[1
]}

Pan, Chen ^{[1
]}

Gao, Chunxue ^{[1
]}

Wang, Chao ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Engn, 2 Sipailou, Nanjing 210096, Jiangsu, Peoples R China

来源：

2015 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2015年

关键词：

ZnO thin films; DC magnetron sputtering; working pressure; XRD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films were prepared by reactive DC magnetron sputtering under different working pressures. ZnO thin films prepared at 40% O-2 content in the mixed gases under the working pressure of 1.2 Pa exhibited excellent properties, such as high transmittance, high band-gap energy (3.27 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO thin film transistors.

引用

页数：2

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