Interfacial reactions between Sn-3.5 Ag solder and Ni-W alloy films

被引：13
|
作者：
Haseeb, A. S. M. A. [1 ]
Chew, C. S. [1 ]
Johan, Mohd Rafie [1 ]
机构：
[1] Univ Malaya, Dept Mech Engn, Kuala Lumpur 50603, Malaysia
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2011年 / 22卷 / 09期
关键词：
SOLID-STATE AMORPHIZATION; BARRIER PROPERTIES; SN SOLDER; METALLIZATION; TUNGSTEN; LAYER; CU; STABILITY; BORON;
D O I：
10.1007/s10854-011-0316-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nickel based alloys are currently being investigated in an effort to develop stable barrier films between lead free solder and copper substrate. In this study, interfacial reactions between Ni-W alloy films and Sn-3.5 Ag solder have been investigated. Ni-W alloys films with tungsten content in the range of 5.0-18.0 at.% were prepared on copper substrate by electrodeposition in ammonia citrate bath. Solder joints were prepared on the Ni-W coated substrate at a reflow temperature of 250 A degrees C. The solder joint interface was investigated by Cross-sectional scanning electron microscopy, energy dispersive X-ray spectroscopy and electron back scatter diffraction. It has been observed that a Ni3Sn4 layer with faceted morphology formed on the Ni-W alloy film after reflow. The thickness of the bright layer was found to decrease with the increase of tungsten content in the Ni-W film. An additional layer with a bright appearance was also found to form below the Ni3Sn4 layer. The bright layer was identified to be a ternary phase containing Sn, W and Ni. The bright layer is found to be amorphous and is suggested to have formed through solid state amorphization caused by anomalously fast diffusion of Sn into Ni-W film.
引用
收藏
页码：1372 / 1377
页数：6
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