Asymmetric Composite Free Layers With Compensated Magnetization for Ultrahigh Density Integration of STT-MRAM

被引：2

作者：

Shen, Jie ^{[1
]}

Shi, Minjie ^{[1
]}

Tanaka, Terumitsu ^{[1
]}

Matsuyama, Kimihide ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2014年 / 50卷 / 11期

关键词：

Micromagnetic simulation; spin-transfer torque (STT) random access memory (RAM); synthetic antiferromagnetic (AF) structure; SWITCHING FIELD; MULTILAYERS;

D O I：

10.1109/TMAG.2014.2326894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper analyzes the magnetization switching behavior of an asymmetric synthetic antiferromagnetic (AF) free layer for spin-transfer torque random access memory and numerically demonstrates thermally assisted magnetization switching. Optimization of the free-layer thickness and the magnetic properties enables successful magnetization switching while retaining the AF structure during the switching process. The thermal stability was improved by increasing the lateral aspect ratio of the free layers while also maintaining writability with a reduced current density under the thermal assistance.

引用

页数：5

共 50 条

[1] Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM
Santos, Tiffany S.
Mihajlovic, Goran
Smith, Neil
Li, Jui-Lung
Carey, Matthew
Katine, Jordan A.
Terris, Bruce D.
JOURNAL OF APPLIED PHYSICS, 2020, 128 (11)
[2] Integration of STT-MRAM model into CACTI simulator
Arcaro, S.
Di Carlo, S.
Indaco, M.
Pala, D.
Prinetto, P.
Vatajelu, Elena I.
2014 9TH INTERNATIONAL DESIGN & TEST SYMPOSIUM (IDT), 2014, : 67 - 72
[3] Etch Process Technology for High Density STT-MRAM
Endoh, T.
Kang, S.
Kudo, T.
Yagi, Y.
2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG), 2018,
[4] Impact of Magnetic Coupling and Density on STT-MRAM Performance
Wu, Lizhou
Rao, Siddharth
Taouil, Mottaqiallah
Marinissen, Erik Jan
Kar, Gouri Sankar
Hamdioui, Said
PROCEEDINGS OF THE 2020 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE 2020), 2020, : 1211 - 1216
[5] Improving STT-MRAM Density Through Multibit Error Correction
Del Bel, Brandon
Kim, Jongyeon
Kim, Chris H.
Sapatnekar, Sachin S.
2014 DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION (DATE), 2014,
[6] Top-pinned STT-MRAM devices with high thermal stability hybrid free layers for high density memory applications
Liu, E.
Swerts, J.
Vaysset, A.
Wu, Y.
Couet, S.
Mertens, S.
Rao, S.
Kim, W.
Van Elshocht, S.
De Boeck, J.
Kar, G. S.
2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG), 2018,
[7] Recent Technology Insights on STT-MRAM: Structure, Materials, and Process Integration
Choe, Jeongdong
2023 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW, 2023, : 5 - 8
[8] Top-Pinned STT-MRAM Devices With High Thermal Stability Hybrid Free Layers for High-Density Memory Applications
Liu, Enlong
Swerts, Johan
Wu, Yueh Chang
Vaysset, Adrien
Couet, Sebastien
Mertens, Sofie
Rao, Siddharth
Kim, Woojin
Van Elshocht, Sven
De Boeck, Jo
Kar, Gouri Sankar
IEEE TRANSACTIONS ON MAGNETICS, 2018, 54 (11)
[9] A Novel STT-MRAM Cell With Disturbance-Free Read Operation
Huda, Safeen
Sheikholeslami, Ali
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2013, 60 (06) : 1534 - 1547
[10] A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications
Rao, Siddharth
Couet, Sebastien
Van Beek, Simon
Kundu, Shreya
Sharifi, Shamin Houshmand
Jossart, Nico
Kar, Gouri Sankar
ELECTRONICS, 2021, 10 (19)

← 1 2 3 4 5 →