Maskless patterning of KTiOPO4 crystals by focused ion beam

被引：6
|
作者：
Bachmann, T [1 ]
Menzel, R [1 ]
Wesch, W [1 ]
Schmidt, C [1 ]
机构：
[1] Friedrich Schiller Univ, Inst Festkorperphys, D-07743 Jena, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 139卷 / 1-4期
关键词：
focused ion beam; KTP; sputtering;
D O I：
10.1016/S0168-583X(97)00959-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
KTiOPO4 was irradiated by a focused Ga+-ion beam to doses ranging from 3 x 10(14) to 1 x 10(18) Ga+ cm(-2) at energies between 10 and 50 keV. The irradiated squares were investigated with respect to surface topography by means of atomic force microscopy. The measurements indicate a monotonous increase of the sputtering yield with ion energy up to 25 keV. At higher energies the yield saturates. The results are discussed and compared with TRIM 87 calculations. As a possible application the manufacture of gratings is demonstrated. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：318 / 321
页数：4
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