Mg-doped high-quality AlxGa1-xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

被引：24

作者：

Imura, M. ^{[1
]}

Kato, N. ^{[1
]}

Okada, N. ^{[1
]}

Balakrishnan, K. ^{[1
]}

Iwaya, M. ^{[1
]}

Kamiyama, S. ^{[1
]}

Amano, H. ^{[1
]}

Akasaki, I. ^{[1
]}

Noro, T. ^{[2
]}

Takagi, T. ^{[2
]}

Bandoh, A. ^{[3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, 21st COE Nano Factory, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

[2] IBIDEN Co Ltd, Gifu 5038503, Japan

[3] Showa Denko K K, Chiba 2670056, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674880

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the growth of Mg-doped AlxGa1-xN alloys and characterization of their optical properties. Under the low Mg concentration in the range 2 x 10(17) to 1 x 10(18) cm(-3) of AlxGa1-xN, the activation energy of Mg acceptor became higher and higher with increase in the Al content of AlxGa1-xN. The experimental results for activation energies of Mg acceptor fitted quite well with the hydrogen atom like model. By the Haynes' rule, relationship between bound-excition energy and activation energy of Mg acceptor was investigated, which coincided with our experimental results. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2502 / +

页数：2

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