Room temperature ferromagnetism in N-doped rutile TiO2 films

被引:50
|
作者
Bao, N. N. [2 ]
Fan, H. M. [1 ]
Ding, J. [1 ]
Yi, J. B. [1 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore
[2] Natl Univ Singapore, Nanosci & Nanotechnol Initiat, Singapore 119260, Singapore
基金
新加坡国家研究基金会;
关键词
ORIGIN; ZNO;
D O I
10.1063/1.3535427
中图分类号
O59 [应用物理学];
学科分类号
摘要
Room temperature ferromagnetism has been experimentally observed in TiO2: N films prepared by pulse laser deposition under N2O atmosphere. The ferromagnetism appears when the N2O partial pressure is higher than 10(-5) Torr. XPS study has revealed that N substitutes O at the partial pressure of 10(-5) Torr, whereas additional N atoms occupy interstitial sites besides substituting N at higher N2O partial pressures. Our study indicates that the origin of the ferromagnetism is the O substitution with N. Each substituted N has a magnetic moment of approximately 0.9 mu(B). The substitution of O also resulted in p-type behavior, accompanied with magnetoresistance and anomalous Hall effect. (C) 2011 American Institute of Physics. [doi:10.1063/1.3535427]
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页数:3
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