Study of the light emission in Ge layers and strained membranes on Si substrates

被引：14

作者：

Gassenq, A. ^{[1
]}

Guilloy, K. ^{[1
]}

Pauc, N. ^{[1
]}

Hartmann, J. -M. ^{[2
]}

Dias, G. Osvaldo ^{[2
]}

Rouchon, D. ^{[2
]}

Tardif, S. ^{[1
]}

Escalante, J. ^{[1
]}

Duchemin, I. ^{[1
]}

Niquet, Y. -M. ^{[1
]}

Chelnokov, A. ^{[2
]}

Reboud, V. ^{[2
]}

Calvo, Vincent ^{[1
]}

机构：

[1] Univ Grenoble Alpes CEA, INAC SP2M, F-38000 Grenoble, France

[2] CEA LETI Minatec Grenoble, 17 Rue Martyrs, F-38054 Grenoble, France

来源：

THIN SOLID FILMS | 2016年 / 613卷

关键词：

TENSILE STRAIN; GERMANIUM; SILICON; OPTOELECTRONICS; NANOMEMBRANES; SPECTROSCOPY; STRESS;

D O I：

10.1016/j.tsf.2015.11.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of pattern design and tensile strain on light emission was investigated in Ge layers and suspended membranes. The optical properties were examined by micro-photoluminescence and reflectivity. Tensile strain was extracted from micro-Raman spectroscopy. It has been shown that Fabry-Perot interference fringes can dominate the photoluminescence spectra. It is crucial to remove them in order to analyze the photoluminescence changes coming from tensile strain; especially if Fabry-Perot oscillations are in the same energy range compared to the stress-induced spectral shift. This study highlights the fact that this interference must be taken into account in order to examine the strain in suspended Ge layers. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：64 / 67

页数：4

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