Ag+-ion implantation of silicon

被引：3

作者：

Stepanov, A. L. ^{[1
,2
]}

Nuzhdin, V. I. ^{[1
]}

Valeev, V. F. ^{[1
]}

Vorobev, V. V. ^{[1
,2
]}

Osin, Y. N. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Kazan Phys Tech Inst, Nanoopt & Nanoplasmon Dept, Sibirsky Trakt 10-7, Kazan 420029, Russia

[2] Kazan Fed Univ, Interdisciplinary Ctr Analyt Microscopy, Kazan, Russia

来源：

PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS | 2018年 / 193卷 / 02期

基金：

俄罗斯科学基金会;

关键词：

Silver nanoparticles; porous silicon; ion implantation; OPTICAL-PROPERTIES; POROUS SILICON; LOW ENERGIES; NANOPARTICLES; PLASMONICS; SI;

D O I：

10.1080/10426507.2017.1417307

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The new results on the optical reflection of the Si surface layers implanted by silver ions at low energies of 30keV over a wide dose range from 5.0 x 10(14) to 1.5 x 10(17) ion/cm(2) are presented. As the ion dose of irradiation was increased, a monotonic decrease in the reflection intensity in the ultraviolet region of the spectrum was observed, due to amorphization and macrostructuring of the Si surface. On the other hand, in the long-wavelength region, a selective reflection band appears with a maximum near 830nm due to plasmon resonance of Ag nanoparticles synthesized during implantation. [GRAPHICS] .

引用

页码：110 / 114

页数：5

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