Calculation of valence band structure of uniaxial ⟨111⟩ stressed silicon

The valence band structure of uniaxial < 111 > stressed silicon is calculated in the frame of k center dot p perturbation method and compared with that of unstressed silicon. The valence band energy level shifting, splitting, and variation of the effective mass in the vicinity of the Gamma point are presented for different uniaxail < 111 > stresses. The effective masses for the heavy and light hole bands in unstressed, our calculation results are in good agreement with the obtained published results of bulk silicon. The study extends the selective range of optimum stresses and crystal direction configuration of conduction channels for uniaxial stressed silicon devices. The obtained results of splitting energy and effective mass may serve as the reference for the calculation of other physical parameters of uniaxial < 111 > stressed silicon.