Characterization Techniques for Stability and Noise in Microwave Amplifiers under Large-Signal Excitations

被引：0
|
作者：
Collantes, Juan-Mari [1 ]
Portilla, Joaquin [1 ]
Anakabe, Aitziber [1 ]
Otegi, Nerea [1 ]
机构：
[1] Univ Basque Country, UPV EHU, Dept Elect & Elect, Leioa 48940, Spain
来源：
2016 IEEE MTT-S LATIN AMERICA MICROWAVE CONFERENCE (LAMC) | 2016年
关键词：
Microwave measurements; stability; noise; amplifiers; CIRCUITS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, two characterization approaches for electrical noise and stability in microwave amplifiers operating in large-signal regimes are reviewed. The first technique concerns the experimental determination of amplifier stability margins through pole-zero analysis of measured closed-loop frequency responses. The second technique deals with the measurement of AM and PM amplifier noise in non-linear regime and outlines the main differences with the linear case.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Behavioral modeling of microwave amplifiers including large-signal and noise interaction
    Chambon, Cedric
    Escotte, Laurent
    Gonneau, Eric
    2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, 2006, : 95 - +
  • [2] Large-signal stability analysis of microwave amplifiers under complex modulated signals with time-varying envelope
    Collado, A
    Collantes, JM
    Suárez, A
    2005 IEEE MTT-S International Microwave Symposium, Vols 1-4, 2005, : 809 - 812
  • [3] DESIGN AND ANALYSIS OF LARGE-SIGNAL MICROWAVE-POWER AMPLIFIERS
    MOKARIBOLHASSAN, ME
    WONG, WK
    1989 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-3, 1989, : 2231 - 2234
  • [4] MICROWAVE CHARACTERIZATION OF SILICON BARITT DIODES UNDER LARGE-SIGNAL CONDITIONS
    MONTRESS, GK
    GUPTA, MS
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 458 - 462
  • [5] Large-signal characterization of microwave power devices
    Teyssier, JP
    Barataud, D
    Charbonniaud, C
    De Groote, F
    Mayer, M
    Nébus, JM
    Quéré, R
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2005, 15 (05) : 479 - 490
  • [6] Innovative techniques for device large-signal noise simulations
    Bonani, F.
    Bertazzi, F.
    Conte, G.
    Guerrieri, S. Donati
    Ghione, G.
    NOISE AND FLUCTUATIONS, 2007, 922 : 359 - +
  • [7] PARAMETER EXTRACTION FOR LARGE-SIGNAL NOISE MODELS AND SIMULATION OF NOISE IN LARGE-SIGNAL CIRCUITS
    ROHDE, UL
    CHANG, CR
    MICROWAVE JOURNAL, 1993, 36 (05) : 222 - &
  • [8] PREDICTED LARGE-SIGNAL PERFORMANCE IMPROVEMENT BY ACTIVE COMPENSATION IN MICROWAVE IMPATT AMPLIFIERS
    RIRIS, A
    AITCHISON, CS
    ELECTRONICS LETTERS, 1983, 19 (25-2) : 1090 - 1091
  • [9] Stability Analysis and Design Criteria of Paralleled-Device Power Amplifiers Under Large-Signal Regime
    Pantoli, Leonardo
    Leuzzi, Giorgio
    Santarelli, Alberto
    Filicori, Fabio
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (05) : 1442 - 1455
  • [10] Studies on small- and large-signal noise in Solid-State Amplifiers
    Portilla, J.
    Jauregui, R.
    Garmendia, N.
    2013 IEEE 14TH ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON), 2013,
12345